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| UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Current (PULSE) Collector Power Dissipation( Tc=25C ) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IB Ic Pc Tj TSTG RATING 200 120 8 3 7 14 70 150 -55 ~ +150 UNIT V V V A A A W C C ELECTRICAL CHARACTERISTICS (Ta=25C,unless otherwise specified) PARAMETER Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Turn-on Time Storage Time Fall Time SYMBOL BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf TEST CONDITIONS Ic= 50mA VCB=200V, IE=0 VEB= 8V, Ic =0 VCE= 4V,Ic= 3A Ic=3A ,IB=0.3A Ic=3A ,IB=0.3A VCE=12V,IE=-0.5mA VCB= 10V, IE= 0 A,f=1MHz See specified Test Circuit MIN 120 TYP MAX 100 100 220 0.5 1.2 UNIT V A A V V MHz pF s s s 70 30 110 0.5 3.0 0.5 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R214-002,A UTC 2SC3835 RANK RANGE NPN EPITAXIAL SILICON TRANSISTOR A 70-130 B 120-170 C 160-220 CLASSIFICATION of hFE Typical Switching Characteristics(Common Emitter) Vcc (V) 50 RL () 16.7 +VBB1 0 50s 0 20s -VBB2 GND R1 IB1 D.U.T R2 IB2 RL 0 IC Ic (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.6 IC VCC IB 0 0.9IC 0.1IC tON tstg tf IB1 IB2 0 0 ELECTRICAL CHARACTERISTICS CURVES Ic-VCE 7 6 Collector Current, Ic (A) 5 4 3 2 1 0 0 1 2 3 Collector-Emitter Voltage VCE (V) 4 Collector-Emitter Saturation Voltage, VCE(sat) (V) m 200 A 15 0m A VCE(sat)-IB 2.6 10 0m A 2 A 60 m A 40 m A 20 m 5A 3A 1 A IC=1 IB=10mA 0 0.005 0.01 0.05 0.1 Base Current, IB (A) 0.5 1 UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R214-002,A UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR fT-IE VCE=12V 7 6 5 4 IC-VBE Temperature 30 Cut- off Frequency, fT (MH Z) 1.0 1.1 Collector Current, Ic (A) 20 125 (Tc ) 3 2 1 0 0 (Tc ) 25 -30 (Tc) 10 0.5 0 -0.01 -0.05-0.1 -0.5 -1 -5 Base-Emittor Voltage, VBE (V) Emitter Current, IE (A) HFE-Ic DC Current Gain, HFE 200 100 50 VCE=4V Typ 100 50 300 VCE=4V HFE-Ic Temperature 125 25 -30 20 0.02 0.1 0.5 1 Collector Current Ic (A) 57 20 0.01 0.05 0.1 0.5 1 Collector Current Ic (A) 57 j-a-t Transient Thermal Resistance, j-a (C/W) 5 1 0.5 0.4 1 10 100 Time, t (ms) 1000 2000 UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R214-002,A UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR Pc-Ta Derating 70 Maximum Power Dissipation, Pc (W) 60 W Safe Operating Area (Single Pulse) 20 10 Collector Current, Ic (A) 5 s 10m 10 0m s 50 40 30 20 10 3.5 00 ith ite fin In 1 0.5 Without Healstink Natural Cooling 0.1 0.05 5 10 50 120 200 sin at He k Without Heatsink 25 50 75 100 125 150 Collector-Emitter Current, VcE (A) Ambient Temperature Ta () UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R214-002,A |
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